advanced power dual n-channel mosfet with electronics corp. schottky diode simple drive requirement ch-1 bv dss 30v easy for synchronous buck r ds(on) 8.5m converter application i d 48a rohs compliant & halogen-free ch-2 bv dss 30v r ds(on) 3.8m description i d 87a absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol parameter units ch-2 v ds drain-source voltage 30 v v gs gate-source voltage + 12 v i d @t c =25 drain current (chip limited) , v gs @ 10v 87 a i d @t a =25 drain current 3 , v gs @ 10v 25.7 a i d @t a =70 drain current 3 , v gs @ 10v 20.5 a i dm pulsed drain current 1 60 a p d @t a =25 total power dissipation 3.9 w t stg storage temperature range t j operating junction temperature range ch-2 rthj-c 2.8 /w rthj-a 32 /w rthj-a 60 /w data & specifications subject to change without notice -55 to 150 3.13 40 30 maximum thermal resistance, junction-ambient 3 4 40 70 thermal data 201412173 symbol ch-1 rating units parameter 1 maximum thermal resistance, junction-case maximum thermal resistance, junction-ambient 4 halogen-free product -55 to 150 + 20 ap6922gmt-hf 48 15 12 rating ch-1 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. g1 d1 d1 d1 pmpak ? 5x6 g2 s2 s2 s2 g1 d1 d1 d1 g2 s2 s2 s2 s1/d2 d1 the control mosfet (ch-1) and synchronous mosfet (ch-2) co-package for synchronous buck converters. g1 g2 d1 d2/s1 s2
ch-1 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - 6.5 8.5 m ? v gs =4.5v, i d =8a - 9.3 12.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.1 1.5 3 v g fs forward transconductance v ds =10v, i d =12a - 36 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =12a - 6.5 10.4 nc q gs gate-source charge v ds =15v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =15v - 7.5 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 ? -18- ns t f fall time v gs =10v - 7 - ns c iss input capacitance v gs =0v - 600 960 pf c oss output capacitance v ds =15v - 220 - pf c rss reverse transfer capacitance f=1.0mhz - 100 - pf r g gate resistance f=1.0mhz - 2.7 5.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =12a, v gs =0v - - 1.2 v t rr reverse recovery time i s =12a, v gs =0 v , - 20 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc 2 ap6922gmt-hf
ap6922gmt-hf ch-2 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - 2.9 3.8 m v gs =4.5v, i d =12a - 4 5.2 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.5 3 v g fs forward transconductance v ds =10v, i d =20a - 60 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge i d =20a - 36 57 nc q gs gate-source charge v ds =15v - 10 - nc q gd gate-drain ("miller") charge v gs =4.5v - 20 - nc t d(on) turn-on delay time v ds =15v - 15 - ns t r rise time i d =1a - 10 - ns t d(off) turn-off delay time r g =3.3 ? -60- ns t f fall time v gs =10v - 25 - ns c iss input capacitance v gs =0v - 3900 6240 pf c oss output capacitance v ds =15v - 500 - pf c rss reverse transfer capacitance f=1.0mhz - 400 - pf r g gate resistance f=1.0mhz - 1.6 3.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd diode+schottky forward on voltage 2 i s =1a, v gs =0v - 0.48 0.5 v t rr body diode+schottky reverse recovery time i s =10a, v gs =0 v , - 25 - ns q rr body diode+schottky reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec. 4.surface mounted on 1 in 2 copper pad of fr4 board, on steady-state this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3
a p6922gmt-h f channel-1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 5 10 15 20 00011111 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 5 7 9 11 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =1ma
ap6922gmt-h f channel-1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. case temperature 5 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =70 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 02468101214 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =15v 0 200 400 600 800 1000 1200 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 10 20 30 40 50 60 70 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j =-40 o c
a p6922gmt-h f channel-2 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 10 20 30 40 50 60 70 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 10 20 30 40 50 60 70 80 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =10v 0 2 4 6 8 0001111 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 2 3 4 5 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =1ma
ap6922gmt-h f channel-2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. case temperature 7 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t a =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = pdm x r thja + t a r thja =60 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v 0 1000 2000 3000 4000 5000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 40 80 120 160 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 20 40 60 80 100 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) t j =-40 o c
ap6922mt-hf marking information 8 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r meet rohs requirement for low voltage mosfet only 6922gmt ywwsss package code : mt
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